MOSFET P-CH 30V 2A TSMT6
10.3 DB SMT DIRECTIONAL COUPLER,
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 160mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 3.2 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 230 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1.25W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TSMT6 (SC-95) |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTBG160N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 19.5A D2PAK |
|
NDT014LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 2.8A SOT223-4 |
|
NVMFS5A160PLZWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 15A/100A 5DFN |
|
FDB3672Rochester Electronics |
MOSFET N-CH 100V 7.2A/44A TO263 |
|
FQI50N06LTURochester Electronics |
MOSFET N-CH 60V 52.4A I2PAK |
|
DMP4011SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V PWRDI5060 |
|
EMH1405-TL-HRochester Electronics |
MOSFET N-CH 30V 8.5A 8EMH |
|
SIHJ240N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A PPAK SO-8 |
|
IRF7607TRPBFRochester Electronics |
IRF7607 - 12V-300V N-CHANNEL POW |
|
EPC2206EPC |
GANFET N-CH 80V 90A DIE |
|
PSMN1R0-30YLC,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
IPA50R190CEXKSA2Rochester Electronics |
IPA50R190 - 500V COOLMOS N-CHANN |
|
STP3NK80ZSTMicroelectronics |
MOSFET N-CH 800V 2.5A TO220AB |