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FQI8N60CTU

FQI8N60CTU

MOSFET N-CH 600V 7.5A I2PAK

FQI8N60CTU

FQI8N60CTU

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Part No :

FQI8N60CTU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 7.5A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
25781 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 24 - Dec 28 2024
PDF
FQI8N60CTU PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.255 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 147W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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