PWR XFMR LAMINATED 2.4VA TH
MOSFET N-CH 20V 230MA SOT523
VERSION= 11-19 MM, USE=FOR MAGNE
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: | 3Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 14.1 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 300mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SPU21N05LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTP180N10TWickmann / Littelfuse |
MOSFET N-CH 100V 180A TO220AB |
|
VN2410L-GRoving Networks / Microchip Technology |
MOSFET N-CH 240V 190MA TO92-3 |
|
IRFS3006PBFRochester Electronics |
MOSFET N-CH 60V 195A D2PAK |
|
IRF7493TRPBFIR (Infineon Technologies) |
MOSFET N-CH 80V 9.3A 8SO |
|
FQI8N60CTURochester Electronics |
MOSFET N-CH 600V 7.5A I2PAK |
|
FDS6679AZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 13A 8SOIC |
|
FDS6689SRochester Electronics |
MOSFET N-CH 30V 16A 8SOIC |
|
SI3473CDV-T1-E3Vishay / Siliconix |
MOSFET P-CH 12V 8A 6TSOP |
|
TPC6111(TE85L,F,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 5.5A VS-6 |
|
STB47N60DM6AGSTMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 600 V |
|
APT60M60JLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 70A ISOTOP |
|
IRF322Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |