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IPP50CN10NGXKSA1

IPP50CN10NGXKSA1

MOSFET N-CH 100V 20A TO220-3

IPP50CN10NGXKSA1

IPP50CN10NGXKSA1

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Part No :

IPP50CN10NGXKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 20A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13660 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
IPP50CN10NGXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1090 pF @ 50 V
FET Feature:-
Power Dissipation (Max):44W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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