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SISH112DN-T1-GE3

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SISH112DN-T1-GE3

SISH112DN-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SISH112DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 11.3A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14050 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2610 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.5W (Tc)
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8SH
Package / Case:PowerPAK® 1212-8SH
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