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IPD60R600E6BTMA1

IPD60R600E6BTMA1

N-CHANNEL POWER MOSFET

IPD60R600E6BTMA1

IPD60R600E6BTMA1

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Part No :

IPD60R600E6BTMA1

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
72500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 24 - Dec 28 2024
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
IPD60R600E6BTMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD60R600E6BTMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD60R600E6BTMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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