MOSFET N-CH 1000V 12A TO247AD
Type | Description |
---|---|
Series: | HiPerRF™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.05Ohm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 77 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2700 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247AD (IXFH) |
Package / Case: | TO-3P-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF2805STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 135A D2PAK |
|
BSC0402NSATMA1IR (Infineon Technologies) |
150V, N-CH MOSFET, LOGIC LEVEL, |
|
IRLI540GVishay / Siliconix |
MOSFET N-CH 100V 17A TO220-3 |
|
SPB80N03S2L-05Rochester Electronics |
MOSFET N-CH 30V 80A TO263-3 |
|
FDMS8820Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 28A/116A 8PQFN |
|
IXFT26N50Wickmann / Littelfuse |
MOSFET N-CH 500V 26A TO268 |
|
FQD2P40TFRochester Electronics |
MOSFET P-CH 400V 1.56A DPAK |
|
AOD3N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 2.8A TO252 |
|
PSMN013-80YS,115Nexperia |
MOSFET N-CH 80V 60A LFPAK56 |
|
IRFS240BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
CSD18532NQ5BTTexas Instruments |
MOSFET N-CH 60V 100A 8VSON |
|
SPP80N06S2L-11Rochester Electronics |
MOSFET N-CH 55V 80A TO220-3 |
|
BUK7535-55A,127Rochester Electronics |
PFET, 35A I(D), 55V, 0.035OHM, 1 |