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STB35N65M5

STB35N65M5

MOSFET N-CH 650V 27A D2PAK

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STB35N65M5

STB35N65M5

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Part No :

STB35N65M5

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 27A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10965 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
STB35N65M5 PDF
Type Description
Series:MDmesh™ V
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:98mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:83 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3750 pF @ 100 V
FET Feature:-
Power Dissipation (Max):160W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB35N65M5 is available at GangBo-ic.com, Please review product page below for detailed information, including STB35N65M5 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STB35N65M5 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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