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FDG311N

FDG311N

MOSFET N-CH 20V 1.9A SC88

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FDG311N

FDG311N

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Part No :

FDG311N

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 20V 1.9A SC88
Catalog
Transistors - FETs, MOSFETs - Single
Availability
228847 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
PDF
FDG311N PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:115mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 10 V
FET Feature:-
Power Dissipation (Max):750mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-88 (SC-70-6)
Package / Case:6-TSSOP, SC-88, SOT-363
FDG311N is available at GangBo-ic.com, Please review product page below for detailed information, including FDG311N price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDG311N to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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