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FQPF6N80T

FQPF6N80T

MOSFET N-CH 800V 3.3A TO220F

FQPF6N80T

FQPF6N80T

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Part No :

FQPF6N80T

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 3.3A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15111 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
FQPF6N80T PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.95Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.5 pF @ 25 V
FET Feature:-
Power Dissipation (Max):51W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF6N80T is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF6N80T price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF6N80T to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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