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BUZ31HXKSA1

BUZ31HXKSA1

MOSFET N-CH 200V 14.5A TO220-3

GRD21625375PA

GRD21625375PA

DIAPHRAGM GROMMET - ONE SIDED CU

BUZ31HXKSA1

BUZ31HXKSA1

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Part No :

BUZ31HXKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 200V 14.5A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15300 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
BUZ31HXKSA1 PDF
Type Description
Series:SIPMOS®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:200mOhm @ 9A, 5V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.12 pF @ 25 V
FET Feature:-
Power Dissipation (Max):95W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
BUZ31HXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BUZ31HXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BUZ31HXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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