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R6030ENZ4C13

R6030ENZ4C13

MOSFET N-CH 600V 30A TO247

R6030ENZ4C13

R6030ENZ4C13

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Part No :

R6030ENZ4C13

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 30A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
744474 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 27 - Dec 31 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 25 V
FET Feature:-
Power Dissipation (Max):305W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
R6030ENZ4C13 is available at GangBo-ic.com, Please review product page below for detailed information, including R6030ENZ4C13 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6030ENZ4C13 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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