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PMV30UN2R

PMV30UN2R

MOSFET N-CH 20V 4.2A TO236AB

PMV30UN2R

PMV30UN2R

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Part No :

PMV30UN2R

Manufacturer
Nexperia
Description
MOSFET N-CH 20V 4.2A TO236AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
764476 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2024
PDF
PMV30UN2R PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:32mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:655 pF @ 10 V
FET Feature:-
Power Dissipation (Max):490mW (Ta), 5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
PMV30UN2R is available at GangBo-ic.com, Please review product page below for detailed information, including PMV30UN2R price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for PMV30UN2R to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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