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BSC0906NSATMA1

BSC0906NSATMA1

MOSFET N-CH 30V 18A/63A TDSON

BSC0906NSATMA1

BSC0906NSATMA1

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Part No :

BSC0906NSATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 18A/63A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12275 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
BSC0906NSATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
BSC0906NSATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC0906NSATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC0906NSATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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