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FDV303N

FDV303N

MOSFET N-CH 25V 680MA SOT23

600 H-1000

600 H-1000

ENGINEERS' HAMMER ROTBAND-PLUS

FDV303N

FDV303N

Image is for reference, please contact us to get the real picture

Part No :

FDV303N

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 25V 680MA SOT23
Catalog
Transistors - FETs, MOSFETs - Single
Availability
107924 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FDV303N PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.3 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:-
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
FDV303N is available at GangBo-ic.com, Please review product page below for detailed information, including FDV303N price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDV303N to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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