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SSM6J507NU,LF

SSM6J507NU,LF

MOSFET P-CH 30V 10A 6UDFNB

CH8KH,GY

CH8KH,GY

BOX ABS GRAY 2.58"L X 2.02"W

SSM6J507NU,LF

SSM6J507NU,LF

Image is for reference, please contact us to get the real picture

Part No :

SSM6J507NU,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET P-CH 30V 10A 6UDFNB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
33196 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SSM6J507NU,LF PDF
Type Description
Series:U-MOSVI
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20.4 nC @ 4.5 V
Vgs (Max):+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.25W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-UDFNB (2x2)
Package / Case:6-WDFN Exposed Pad
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