MOSFET N-CHANNEL 400V 4.5A TO220
Type | Description |
---|---|
Series: | - |
Package: | Bag |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400 V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.5Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 780 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 75W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXTP80N075L2Wickmann / Littelfuse |
MOSFET N-CH 75V 80A TO220AB |
|
AUIRFR2905ZTRLRochester Electronics |
MOSFET N-CH 55V 42A DPAK |
|
SIHD3N50D-BE3Vishay / Siliconix |
MOSFET N-CH 500V 3A DPAK |
|
APT31M100B2Roving Networks / Microchip Technology |
MOSFET N-CH 1000V 32A T-MAX |
|
G2R1000MT17JGeneSiC Semiconductor |
SIC MOSFET N-CH 3A TO263-7 |
|
IXTY4N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 4A TO252 |
|
SN7002WH6433XTMA1Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
FQPF5N90Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 3A TO220F |
|
FCU4300N80ZRochester Electronics |
MOSFET N-CH 800V 1.6A I-PAK |
|
SQ3425EV-T1_BE3Vishay / Siliconix |
MOSFET P-CH 20V 7.4A SOT23-3 |
|
FDT459NRochester Electronics |
6.5A, 30V, 0.035OHM, N-CHANNEL, |
|
IPI80N06S207AKSA1Rochester Electronics |
MOSFET N-CH 55V 80A TO262-3 |
|
R6011KND3TL1ROHM Semiconductor |
MOSFET N-CH 600V 11A TO252 |