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IPW60R099C6FKSA1

IPW60R099C6FKSA1

MOSFET N-CH 600V 37.9A TO247-3

M-51-427-YL

M-51-427-YL

LABEL 2.5" H X 0.75" W 1=180PCS

HCS300-I/P

HCS300-I/P

IC CODE HOPPING ENCODER 8DIP

TL431ACDBZRVL

TL431ACDBZRVL

IC VREF SHUNT 36V 1% TO236AB

IPW60R099C6FKSA1

IPW60R099C6FKSA1

Image is for reference, please contact us to get the real picture

Part No :

IPW60R099C6FKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 37.9A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10944 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPW60R099C6FKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs:119 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2660 pF @ 100 V
FET Feature:-
Power Dissipation (Max):278W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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