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FQPF19N20

FQPF19N20

POWER FIELD-EFFECT TRANSISTOR, 1

FQPF19N20

FQPF19N20

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Part No :

FQPF19N20

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13022 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FQPF19N20 PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:11.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.6 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF19N20 is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF19N20 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF19N20 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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