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IPD30N06S2L23ATMA1

IPD30N06S2L23ATMA1

MOSFET N-CH 55V 30A TO252-3

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IPD30N06S2L23ATMA1

IPD30N06S2L23ATMA1

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Part No :

IPD30N06S2L23ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 55V 30A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
234323 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPD30N06S2L23ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.091 pF @ 25 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD30N06S2L23ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD30N06S2L23ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD30N06S2L23ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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