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FDT1600N10ALZ

FDT1600N10ALZ

MOSFET N-CH 100V 5.6A SOT223-4

FDT1600N10ALZ

FDT1600N10ALZ

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Part No :

FDT1600N10ALZ

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 5.6A SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
FDT1600N10ALZ PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.77 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 50 V
FET Feature:-
Power Dissipation (Max):10.42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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