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FCI25N60N

FCI25N60N

MOSFET N-CH 600V 25A I2PAK

FCI25N60N

FCI25N60N

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Part No :

FCI25N60N

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 25A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
PDF
FCI25N60N PDF
Type Description
Series:SupreMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3.352 pF @ 100 V
FET Feature:-
Power Dissipation (Max):216W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FCI25N60N is available at GangBo-ic.com, Please review product page below for detailed information, including FCI25N60N price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FCI25N60N to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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