MOSFET N-CH 600V 300MA TO92-3
Type | Description |
---|---|
Series: | SuperMESH™ |
Package: | Cut Tape (CT)Tape & Box (TB) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 15Ohm @ 400mA, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.9 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 94 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IQE006NE2LM5CGATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 41A/298A IPAK |
|
FDS6612ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.4A 8SOIC |
|
NP82N055NUG-S18-AYRochester Electronics |
MOSFET N-CH 55V 82A TO262 |
|
IPN80R4K5P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 1.5A SOT223 |
|
STH270N8F7-2STMicroelectronics |
MOSFET N-CH 80V 180A H2PAK |
|
NTF5P03T3GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 3.7A SOT223 |
|
IRFR7746PBFRochester Electronics |
HEXFET POWER MOSFET |
|
IXTT30N60L2Wickmann / Littelfuse |
MOSFET N-CH 600V 30A TO268 |
|
STL140N4LLF5STMicroelectronics |
MOSFET N-CH 40V 140A POWERFLAT |
|
PSMN2R7-30BL,118Nexperia |
MOSFET N-CH 30V 100A D2PAK |
|
STB34N65M5STMicroelectronics |
MOSFET N-CH 650V 28A D2PAK |
|
SI3430DV-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 1.8A 6TSOP |
|
BUK7M9R9-60EXNexperia |
MOSFET N-CH 60V 60A LFPAK33 |