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TSM80N1R2CI C0G

TSM80N1R2CI C0G

MOSFET N-CH 800V 5.5A ITO220AB

TSM80N1R2CI C0G

TSM80N1R2CI C0G

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Part No :

TSM80N1R2CI C0G

Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CH 800V 5.5A ITO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10975 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
TSM80N1R2CI C0G PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:685 pF @ 100 V
FET Feature:-
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ITO-220AB
Package / Case:TO-220-3 Full Pack, Isolated Tab
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