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IPI045N10N3GXKSA1

IPI045N10N3GXKSA1

MOSFET N-CH 100V 100A TO262-3

IPI045N10N3GXKSA1

IPI045N10N3GXKSA1

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Part No :

IPI045N10N3GXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 100A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10480 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
IPI045N10N3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8410 pF @ 50 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI045N10N3GXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPI045N10N3GXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI045N10N3GXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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