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FDP7N50

FDP7N50

MOSFET N-CH 500V 7A TO220-3

FDP7N50

FDP7N50

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Part No :

FDP7N50

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 7A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16098 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 24 - Jan 28 2025
PDF
FDP7N50 PDF
Type Description
Series:UniFET™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:940 pF @ 25 V
FET Feature:-
Power Dissipation (Max):89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FDP7N50 is available at GangBo-ic.com, Please review product page below for detailed information, including FDP7N50 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDP7N50 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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