MOSFET N-CH 30V 6A UFM
IC RF AMP 2.6GHZ-2.8GHZ 24QFN
BLADE CASSETTE CST STRPR Y
Type | Description |
---|---|
Series: | U-MOSVI |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 27.6mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 10.1 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 450 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Supplier Device Package: | UFM |
Package / Case: | 3-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SUM110N10-09-E3Vishay / Siliconix |
MOSFET N-CH 100V 110A TO263 |
|
SCT2H12NYTBROHM Semiconductor |
SICFET N-CH 1700V 4A TO268 |
|
IXTH13N80Wickmann / Littelfuse |
MOSFET N-CH 800V 13A TO247 |
|
FDMS0300SRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
FDD5N50TFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIR624DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 18.6A PPAK SO-8 |
|
NTLUS3C18PZTBGRochester Electronics |
MOSFET P-CH 12V 4.4A 6UDFN |
|
STN1NF20STMicroelectronics |
MOSFET N-CH 200V 1A SOT-223 |
|
PMV100XPEA,215Rochester Electronics |
MOSFET P-CH 20V 2.4A TO236AB |
|
STB22NM60NSTMicroelectronics |
MOSFET N-CH 600V 16A D2PAK |
|
DMP6185SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 9.4A TO252 |
|
NVMFS5C604NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 287A 5DFN |
|
CDM22010-650 SLCentral Semiconductor |
MOSFET N-CH 650V 10A TO220 |