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SCT2H12NYTB

SCT2H12NYTB

SICFET N-CH 1700V 4A TO268

SCT2H12NYTB

SCT2H12NYTB

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Part No :

SCT2H12NYTB

Manufacturer
ROHM Semiconductor
Description
SICFET N-CH 1700V 4A TO268
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10647 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SCT2H12NYTB PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id:4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 18 V
Vgs (Max):+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:184 pF @ 800 V
FET Feature:-
Power Dissipation (Max):44W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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