MOSFET N-CH 650V 14A TO220-3
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, CoolMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 190mOhm @ 6.4A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 320µA |
Gate Charge (Qg) (Max) @ Vgs: | 28 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1291 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 77W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK9Y30-75B,115Nexperia |
MOSFET N-CH 75V 34A LFPAK56 |
|
PMXB65UPEZNexperia |
MOSFET P-CH 12V 3.2A DFN1010D-3 |
|
TK13A45D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 13A TO220SIS |
|
RFD12N06RLESM9ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A TO252AA |
|
IPD90N03S4L03ATMA1Rochester Electronics |
IPD90N03 - 20V-40V N-CHANNEL AUT |
|
MCH6336-TL-WRochester Electronics |
MOSFET P-CH 12V 5A SC88FL/MCPH6 |
|
BUK7227-100B,118Nexperia |
MOSFET N-CH 100V 48A DPAK |
|
IRFR014TRLPBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
AOWF12T60PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 12A TO262F |
|
FDP070AN06A0Rochester Electronics |
MOSFET N-CH 60V 15A/80A TO220-3 |
|
BSC252N10NSFGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 7.2A/40A TDSON |
|
IPA60R125CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 11A TO220 |
|
NTB12N50T4Rochester Electronics |
N-CHANNEL POWER MOSFET |