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RFD12N06RLESM9A

RFD12N06RLESM9A

MOSFET N-CH 60V 18A TO252AA

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RFD12N06RLESM9A

RFD12N06RLESM9A

Image is for reference, please contact us to get the real picture

Part No :

RFD12N06RLESM9A

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 18A TO252AA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10636 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
RFD12N06RLESM9A PDF
Type Description
Series:UltraFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:63mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:485 pF @ 25 V
FET Feature:-
Power Dissipation (Max):49W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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