SICFET N-CH 1200V 37A TO247-3
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Rds On (Max) @ Id, Vgs: | 100mOhm @ 15A, 20V |
Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 64 nC @ 20 V |
Vgs (Max): | +23V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: | 838 pF @ 1000 V |
FET Feature: | - |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NVMFS5C612NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 38A/250A 5DFN |
|
SI2307CDS-T1-BE3Vishay / Siliconix |
MOSFET P-CH 30V 2.7A/3.5A SOT23 |
|
FDD6670ASRochester Electronics |
MOSFET N-CH 30V 76A TO252 |
|
DN2450K4-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 350MA TO252 |
|
NTD18N06LGRochester Electronics |
MOSFET N-CH 60V 18A DPAK |
|
IXTY18P10TWickmann / Littelfuse |
MOSFET P-CH 100V 18A TO252 |
|
DMP210DUFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 200MA 3DFN |
|
FQPF11N50CFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 11A TO220F |
|
IXTA6N50D2Wickmann / Littelfuse |
MOSFET N-CH 500V 6A TO263 |
|
IPS60R400CEAKMA1IR (Infineon Technologies) |
CONSUMER |
|
UF3C170400K3SUnitedSiC |
SICFET N-CH 1700V 7.6A TO247-3 |
|
PMPB10XNEZRochester Electronics |
PMPB10XNE - 20 V, SINGLE N-CHANN |
|
SIR876ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 40A PPAK SO-8 |