MOSFET P-CH 100V 18A TO252
Type | Description |
---|---|
Series: | TrenchP™ |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 120mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 39 nC @ 10 V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 2100 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMP210DUFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 200MA 3DFN |
|
FQPF11N50CFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 11A TO220F |
|
IXTA6N50D2Wickmann / Littelfuse |
MOSFET N-CH 500V 6A TO263 |
|
IPS60R400CEAKMA1IR (Infineon Technologies) |
CONSUMER |
|
UF3C170400K3SUnitedSiC |
SICFET N-CH 1700V 7.6A TO247-3 |
|
PMPB10XNEZRochester Electronics |
PMPB10XNE - 20 V, SINGLE N-CHANN |
|
SIR876ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 40A PPAK SO-8 |
|
BSS123WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 170MA SC70 |
|
CSD18510Q5BTexas Instruments |
MOSFET N-CH 40V 300A 8VSON |
|
AOB4184Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 12A/50A TO263 |
|
IPB100N06S205ATMA4IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO263-3 |
|
SCH1331-S-TL-HRochester Electronics |
MOSFET P-CH 12V 3A SCH6 |
|
NTD50N03R-35GRochester Electronics |
MOSFET N-CH 25V 7.8A/45A IPAK |