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NVTFS4C06NTWG

NVTFS4C06NTWG

MOSFET N-CH 30V 21A 8WDFN

TE1J-1A

TE1J-1A

TX H2 T3HYT 0-1000PPM SMD O/P

NVTFS4C06NTWG

NVTFS4C06NTWG

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Part No :

NVTFS4C06NTWG

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 21A 8WDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
NVTFS4C06NTWG PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:21A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.683 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 37W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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