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IRF200P222

IRF200P222

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Part No :

IRF200P222

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 182A TO247AC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
163416 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
PDF
IRF200P222 PDF
Type Description
Series:StrongIRFET™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:182A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.6mOhm @ 82A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:203 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9820 pF @ 50 V
FET Feature:-
Power Dissipation (Max):556W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
IRF200P222 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF200P222 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF200P222 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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