MOSFET N-CH 800V 6.5A TO220FP
Type | Description |
---|---|
Series: | MDmesh™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.05Ohm @ 3.25A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 620 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FP |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTMFS4936NCT1GRochester Electronics |
11.6A, 30V, 0.0048OHM, N-CHANNE |
|
IPI90R1K0C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRFR5505TRLRochester Electronics |
MOSFET P-CH 55V 18A DPAK |
|
IPA60R650CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7A TO220-FP |
|
IPD053N08N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 90A TO252-3 |
|
R5016ANJTLROHM Semiconductor |
MOSFET N-CH 500V 16A LPTS |
|
AON6796Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 32A/70A 8DFN |
|
IPB048N15N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 120A TO263-3 |
|
SI1403BDL-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 1.5A SC70-6 |
|
NVTR4502PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 1.13A SOT23-3 |
|
DMT10H025SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 41.2A TO252 T&R |
|
IRF353Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM4424CS RVGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 8A 8SOP |