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IPB048N15N5ATMA1

IPB048N15N5ATMA1

MOSFET N-CH 150V 120A TO263-3

IPB048N15N5ATMA1

IPB048N15N5ATMA1

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Part No :

IPB048N15N5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 120A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
663266 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPB048N15N5ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7800 pF @ 75 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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