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IXTP1R4N100P

IXTP1R4N100P

MOSFET N-CH 1000V 1.4A TO220AB

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IXTP1R4N100P

IXTP1R4N100P

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Part No :

IXTP1R4N100P

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1000V 1.4A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
483148 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IXTP1R4N100P PDF
Type Description
Series:Polar™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:17.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:-
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IXTP1R4N100P is available at GangBo-ic.com, Please review product page below for detailed information, including IXTP1R4N100P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXTP1R4N100P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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