MOSFET N-CH 850V 3.5A TO263
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 850 V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.5Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 247 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 150W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (IXFA) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SFT1341-C-TL-ERochester Electronics |
MOSFET P-CH 40V 10A DPAK/TP-FA |
|
SCT3040KLHRC11ROHM Semiconductor |
SICFET N-CH 1200V 55A TO247N |
|
IXTA2N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 2A TO263 |
|
IMW120R090M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 26A TO247-3 |
|
BUK7Y113-100EXRochester Electronics |
MOSFET N-CH 100V 12A LFPAK56 |
|
IPB180N03S4L01ATMA1Rochester Electronics |
MOSFET N-CH 30V 180A TO263-7-3 |
|
NVMYS2D4N04CTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 30A/138A LFPAK4 |
|
NVMFS4C310NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 17A/51A 5DFN |
|
STFU18N65M2STMicroelectronics |
MOSFET N-CH 650V 12A TO220FP |
|
SQM120N04-1M7L_GE3Vishay / Siliconix |
MOSFET N-CH 40V 120A TO263 |
|
FQP6N50CRochester Electronics |
MOSFET N-CH 500V 5.5A TO220-3 |
|
TSM048NB06LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 16A/107A 8PDFN |
|
FDS6675Rochester Electronics |
MOSFET P-CH 30V 11A 8SOIC |