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FDS6675

FDS6675

MOSFET P-CH 30V 11A 8SOIC

FDS6675

FDS6675

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Part No :

FDS6675

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 30V 11A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
58796 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
FDS6675 PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
FDS6675 is available at GangBo-ic.com, Please review product page below for detailed information, including FDS6675 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDS6675 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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