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FQP11P06

FQP11P06

MOSFET P-CH 60V 11.4A TO220-3

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FQP11P06

FQP11P06

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Part No :

FQP11P06

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 60V 11.4A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
52000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
FQP11P06 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):53W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP11P06 is available at GangBo-ic.com, Please review product page below for detailed information, including FQP11P06 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP11P06 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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