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RF4E060AJTCR

RF4E060AJTCR

MOSFET N-CH 30V 6A HUML2020L8

RF4E060AJTCR

RF4E060AJTCR

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Part No :

RF4E060AJTCR

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 6A HUML2020L8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12950 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:37mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:HUML2020L8
Package / Case:8-PowerUDFN
RF4E060AJTCR is available at GangBo-ic.com, Please review product page below for detailed information, including RF4E060AJTCR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RF4E060AJTCR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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