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FDMS86255ET150

FDMS86255ET150

MOSFET N-CH 150V 10A/63A POWER56

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FDMS86255ET150

FDMS86255ET150

Image is for reference, please contact us to get the real picture

Part No :

FDMS86255ET150

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 150V 10A/63A POWER56
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10529 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FDMS86255ET150 PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:12.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4480 pF @ 75 V
FET Feature:-
Power Dissipation (Max):3.3W (Ta), 136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power56
Package / Case:8-PowerTDFN
FDMS86255ET150 is available at GangBo-ic.com, Please review product page below for detailed information, including FDMS86255ET150 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMS86255ET150 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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