MOSFET N-CH 30V 590MA DFN1006B-3
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 590mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 670mOhm @ 590mA, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.1 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 30.3 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 310mW (Ta), 1.67W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DFN1006B-3 |
Package / Case: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NP89N04PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 90A TO263 |
|
DMT3009LFVW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 12A PWRDI3333 |
|
RND030N20TLROHM Semiconductor |
MOSFET N-CH 200V 3A CPT3 |
|
IPI65R190CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO262-3 |
|
SISA66DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK1212-8 |
|
RF4E060AJTCRROHM Semiconductor |
MOSFET N-CH 30V 6A HUML2020L8 |
|
NP90N03VUG-E1-AYRochester Electronics |
MOSFET N-CH 30V 90A TO252 |
|
DMN3150L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 28V 3.8A SOT23-3 |
|
SPB07N60C3Rochester Electronics |
SPB07N60 - 600V COOLMOS N-CHANNE |
|
SI1031X-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 155MA SC75A |
|
SQ4850EY-T1_BE3Vishay / Siliconix |
MOSFET N-CH 60V 12A 8SOIC |
|
NVMFS5C450NLWFT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
SSM3K333R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 6A 2-3Z1A |