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IPD50N04S410ATMA1

IPD50N04S410ATMA1

MOSFET N-CH 40V 50A TO252-3-313

2075.0

2075.0

CONN TERM BLK TEST SOCKET

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IPD50N04S410ATMA1

IPD50N04S410ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD50N04S410ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 50A TO252-3-313
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13775 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IPD50N04S410ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 15µA
Gate Charge (Qg) (Max) @ Vgs:18.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1430 pF @ 25 V
FET Feature:-
Power Dissipation (Max):41W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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