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BSC014NE2LSIATMA1

BSC014NE2LSIATMA1

MOSFET N-CH 25V 33A/100A TDSON

BSC014NE2LSIATMA1

BSC014NE2LSIATMA1

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Part No :

BSC014NE2LSIATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 33A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
31088 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2024
PDF
BSC014NE2LSIATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:33A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 12 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
BSC014NE2LSIATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC014NE2LSIATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC014NE2LSIATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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