PFET, 108A I(D), 30V, 0.007OHM,
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 32 nC @ 5 V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 3.373 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 157W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMT3002LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 100A PWRDI5060-8 |
|
FDD3670Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 34A TO252 |
|
FDMC8327LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 12A/14A 8MLP |
|
IRF5802TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 900MA MICRO6 |
|
FDPF51N25RDTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 51A TO220F |
|
DMP2109UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3.7A TSOT26 |
|
NVR4501NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.2A SOT23-3 |
|
BSC010N04LSCATMA1IR (Infineon Technologies) |
DIFFERENTIATED MOSFETS |
|
CSD25481F4Texas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR |
|
IRFD310Rochester Electronics |
0.4A 400V 3.600 OHM N-CHANNEL |
|
SFT1341-WRochester Electronics |
SFT1341-W |
|
IXFN44N80PWickmann / Littelfuse |
MOSFET N-CH 800V 39A SOT-227B |
|
ZXMP7A17KQTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 70V 3.8A TO252 |