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FDD3670

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MOSFET N-CH 100V 34A TO252

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FDD3670

FDD3670

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Part No :

FDD3670

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 34A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
292829 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 27 - Oct 31 2025
PDF
FDD3670 PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:34A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:32mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2490 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FDD3670 is available at GangBo-ic.com, Please review product page below for detailed information, including FDD3670 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDD3670 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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