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IPLK60R1K5PFD7ATMA1

IPLK60R1K5PFD7ATMA1

MOSFET N-CH 600V 3.8A THIN-PAK

IPLK60R1K5PFD7ATMA1

IPLK60R1K5PFD7ATMA1

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Part No :

IPLK60R1K5PFD7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 3.8A THIN-PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
Type Description
Series:CoolMOS™ PFD7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:169 pF @ 400 V
FET Feature:-
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Thin-PAK (5x6)
Package / Case:8-PowerTDFN
IPLK60R1K5PFD7ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPLK60R1K5PFD7ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPLK60R1K5PFD7ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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