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SQD100N02-3M5L_GE3

SQD100N02-3M5L_GE3

MOSFET N-CH 20V 100A TO252AA

SQD100N02-3M5L_GE3

SQD100N02-3M5L_GE3

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Part No :

SQD100N02-3M5L_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 100A TO252AA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11829 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2024
PDF
SQD100N02-3M5L_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5500 pF @ 10 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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