MOSFET P-CH 40V 16.1A 8SO
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 16.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 15mOhm @ 10.2A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 95 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3007 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 6.3W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPD15N06S2L64ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 19A TO252-31 |
|
SI6466DQRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF7465TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 1.9A 8SO |
|
SUD40N08-16-E3Vishay / Siliconix |
MOSFET N-CH 80V 40A TO252 |
|
STD6N65M2STMicroelectronics |
MOSFET N-CH 650V 4A DPAK |
|
SSP1N50BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK669-ACRochester Electronics |
MOSFET N-CH 50V 100MA 3SPA |
|
SIHB22N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A D2PAK |
|
BSC882N03LSGATMA1Rochester Electronics |
MOSFET N-CH 34V TDSON-8-1 |
|
QS5U16TRROHM Semiconductor |
MOSFET N-CH 30V 2A TSMT5 |
|
BUK652R3-40C,127Rochester Electronics |
MOSFET N-CH 40V 120A TO220AB |
|
BUK9Y43-60E,115Nexperia |
MOSFET N-CH 60V 22A LFPAK56 |
|
NTD80N02-1GRochester Electronics |
MOSFET N-CH 24V 80A IPAK |